Effect of low-k oxide thickness variation on gate-all-around floating gate with optimized SiO2/La2O3 tunnel barrier
This paper reports the use of a novel lanthanum oxide (La2O3) tunnel barrier layer with low-k materials, silicon dioxide (SiO2) to improve Gate-All-Around Floating Gate (GAA-FG) memory performance performed using 3-Dimensional (3D) simulator of Silvaco ATLAS. We examine the ability of Variable Oxide...
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主要な著者: | , , , , , |
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フォーマット: | 論文 |
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Institute of Physics Publishing
2019
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オンライン・アクセス: | http://eprints.utm.my/id/eprint/88655/ http://dx.doi.org/10.1088/2053-1591/ab2869 |
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