Design and simulation of a high performance lateral BJTs on TFSOI
Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high...
محفوظ في:
| المؤلفون الرئيسيون: | , |
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| التنسيق: | Conference or Workshop Item |
| اللغة: | English |
| منشور في: |
2006
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.utm.my/id/eprint/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf http://eprints.utm.my/id/eprint/7499/ http://dx.doi.org/10.1109/SMELEC.2006.380692 |
| الوسوم: |
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