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Modeling and simulation of graphene-oxide-based RRAM

We propose a conduction model for resistive random-access memory (RRAM) based on graphene oxide (GO). We associate the electron transport mechanism with a multiphonon trap-assisted tunneling (MTAT) model. Pristine GO is electrically insulating due to the presence of sp3-hybridized oxygen functional...

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書誌詳細
主要な著者:	Lim, E. W., Ahmadi, M. T., Ismail, R.
フォーマット:	論文
出版事項:	Springer New York LLC 2016
主題:	TK Electrical engineering. Electronics Nuclear engineering
オンライン･アクセス:	http://eprints.utm.my/id/eprint/72457/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84961217338&doi=10.1007%2fs10825-016-0813-6&partnerID=40&md5=88654057b4e6a2e75aca544936a9e6e9
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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