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Metal oxide-graphene field-effect transistor: interface trap density extraction model

A simple to implement model is presented to extract interface trap density of graphene field effect transistors. The presence of interface trap states detrimentally affects the device drain current-gate voltage relationship Ids-Vgs. At the moment, there is no analytical method available to extract t...

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Bibliographic Details
Main Authors: Najam, F., Lau, K. C., Lim, C. S., Yu, Y. S., Tan, M. L. P.
Format: Article
Language:English
Published: Beilstein-Institut Zur Forderung der Chemischen Wissenschaften 2016
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/72074/1/FarazNajam2016_MetalOxideGrapheneFieldEffectTransistor.pdf
http://eprints.utm.my/id/eprint/72074/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84990842235&doi=10.3762%2fbjnano.7.128&partnerID=40&md5=b4b0ca42f1c9cb625791d0d644f9e2cf
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http://eprints.utm.my/id/eprint/72074/1/FarazNajam2016_MetalOxideGrapheneFieldEffectTransistor.pdf
http://eprints.utm.my/id/eprint/72074/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84990842235&doi=10.3762%2fbjnano.7.128&partnerID=40&md5=b4b0ca42f1c9cb625791d0d644f9e2cf

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