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Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors

Carbon nanotubes (CNTs) and silicon nanowires (Si NWs) are the potential candidate for the channel material in the next generation of transistors. Although previous works have shown that both CNT- and Si NW-based field-effect-transistors (FET) are able to deliver better performance than conventional...

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Main Authors: Chin, Huei Chaeng, Lim, Cheng Siong, Tan, Michael Loong Peng
Format: Article
Published: American Scientific Publishers 2016
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/71271/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959925824&doi=10.1166%2fsam.2016.2687&partnerID=40&md5=6568d434fb1d7cefa3eb54f08d8e99ff
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spelling my.utm.712712017-11-16T09:59:00Z http://eprints.utm.my/id/eprint/71271/ Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors Chin, Huei Chaeng Lim, Cheng Siong Tan, Michael Loong Peng TK Electrical engineering. Electronics Nuclear engineering Carbon nanotubes (CNTs) and silicon nanowires (Si NWs) are the potential candidate for the channel material in the next generation of transistors. Although previous works have shown that both CNT- and Si NW-based field-effect-transistors (FET) are able to deliver better performance than conventional devices, phonon scattering occurs. In this paper, we examine the phonon scattering effects on the electrical transport characteristic of CNTFETs and Si NWFETs. The impact of phonon scattering is incorporated into the devices through the transmission probability into the ballistic current equation. There are two types of phonons, acoustic phonons and optical phonons, with different mean free paths (MFP). The results show that the effective MFP follows the acoustic phonon MFP at a low gate bias and switches to the optical phonon MFP at a high gate bias. The acoustic phonon is the primary cause of current reduction at a low gate bias, while the optical phonon is dominant in reducing the current at a high gate bias. The ballisticity, which is the ratio of the scattering current to the ballistic current at different channel lengths is examined. It is revealed that transistors with a shorter length operate close to the ballistic region, which is expected, as they approach the phonon MFP. Performances metrics such as drain-induced barrier lowering (DIBL), subthreshold swing (SS) and on-off ratio at different channel length are calculated. The potential of CNTFETs and Si NWFETs work as logic gates are determined through the voltage transfer characteristic (VTC). Finally, the accuracy of the simulation results is verified by comparing with published models and experimental data, exhibiting good agreement with both data. American Scientific Publishers 2016 Article PeerReviewed Chin, Huei Chaeng and Lim, Cheng Siong and Tan, Michael Loong Peng (2016) Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors. Science of Advanced Materials, 8 (5). pp. 1028-1035. ISSN 1947-2935 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959925824&doi=10.1166%2fsam.2016.2687&partnerID=40&md5=6568d434fb1d7cefa3eb54f08d8e99ff
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Chin, Huei Chaeng
Lim, Cheng Siong
Tan, Michael Loong Peng
Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors
description Carbon nanotubes (CNTs) and silicon nanowires (Si NWs) are the potential candidate for the channel material in the next generation of transistors. Although previous works have shown that both CNT- and Si NW-based field-effect-transistors (FET) are able to deliver better performance than conventional devices, phonon scattering occurs. In this paper, we examine the phonon scattering effects on the electrical transport characteristic of CNTFETs and Si NWFETs. The impact of phonon scattering is incorporated into the devices through the transmission probability into the ballistic current equation. There are two types of phonons, acoustic phonons and optical phonons, with different mean free paths (MFP). The results show that the effective MFP follows the acoustic phonon MFP at a low gate bias and switches to the optical phonon MFP at a high gate bias. The acoustic phonon is the primary cause of current reduction at a low gate bias, while the optical phonon is dominant in reducing the current at a high gate bias. The ballisticity, which is the ratio of the scattering current to the ballistic current at different channel lengths is examined. It is revealed that transistors with a shorter length operate close to the ballistic region, which is expected, as they approach the phonon MFP. Performances metrics such as drain-induced barrier lowering (DIBL), subthreshold swing (SS) and on-off ratio at different channel length are calculated. The potential of CNTFETs and Si NWFETs work as logic gates are determined through the voltage transfer characteristic (VTC). Finally, the accuracy of the simulation results is verified by comparing with published models and experimental data, exhibiting good agreement with both data.
format Article
author Chin, Huei Chaeng
Lim, Cheng Siong
Tan, Michael Loong Peng
author_facet Chin, Huei Chaeng
Lim, Cheng Siong
Tan, Michael Loong Peng
author_sort Chin, Huei Chaeng
title Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors
title_short Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors
title_full Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors
title_fullStr Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors
title_full_unstemmed Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors
title_sort phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors
publisher American Scientific Publishers
publishDate 2016
url http://eprints.utm.my/id/eprint/71271/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959925824&doi=10.1166%2fsam.2016.2687&partnerID=40&md5=6568d434fb1d7cefa3eb54f08d8e99ff
_version_ 1643656154312605696
score 13.211869

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