Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors
Carbon nanotubes (CNTs) and silicon nanowires (Si NWs) are the potential candidate for the channel material in the next generation of transistors. Although previous works have shown that both CNT- and Si NW-based field-effect-transistors (FET) are able to deliver better performance than conventional...
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| Format: | Article |
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American Scientific Publishers
2016
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| Online Access: | http://eprints.utm.my/id/eprint/71271/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959925824&doi=10.1166%2fsam.2016.2687&partnerID=40&md5=6568d434fb1d7cefa3eb54f08d8e99ff |
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