Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
Carbon nanotubes (CNT) and silicon nanowires (Si NW) are nominated as the channel material for the next generation of transistors. Although previous works have shown that both CNT- and Si NW- based Field-Effect-Transistors (FET) are able to deliver better performance than conventional devices, phono...
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| Format: | Thesis |
| Language: | English |
| Published: |
2015
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| Online Access: | http://eprints.utm.my/id/eprint/54069/1/ChinHueiChaengMFKE2015.pdf http://eprints.utm.my/id/eprint/54069/ http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:86145 |
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