Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with ∆(so) > E-g

Temperature dependent photo-modulated reflectance is used to measure the band gap Eg and spin-orbit splitting energy ∆so in dilute-Bi In0.53Ga0.47As1-xBix/InP for 1.2% = x = 5.8%. At room temperature, Eg decreases with increasing Bi from 0.65 to 0.47 eV (~2.6 µm), while ∆so increases from 0.42 to 0....

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主要な著者: Chai, Grace M. T., Broderick, Christopher A., O'Reilly, Eoin P. O., Othaman, Zulkafli, Jin, Shirong, Petropoulos, J. P., Zhong, Yujun, Dongmo, Pernell B., Zide, Joshua M. O., Sweeney, Stephen J., Hosea, Thomas Jeff Cockburn
フォーマット: 論文
出版事項: Institute of Physics Publishing (IOP) 2015
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オンライン・アクセス:http://eprints.utm.my/id/eprint/55151/
http://dx.doi.org/10.1088/0268-1242/30/9/094015
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