Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with ∆(so) > E-g

Temperature dependent photo-modulated reflectance is used to measure the band gap Eg and spin-orbit splitting energy ∆so in dilute-Bi In0.53Ga0.47As1-xBix/InP for 1.2% = x = 5.8%. At room temperature, Eg decreases with increasing Bi from 0.65 to 0.47 eV (~2.6 µm), while ∆so increases from 0.42 to 0....

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Bibliographic Details
Main Authors: Chai, Grace M. T., Broderick, Christopher A., O'Reilly, Eoin P. O., Othaman, Zulkafli, Jin, Shirong, Petropoulos, J. P., Zhong, Yujun, Dongmo, Pernell B., Zide, Joshua M. O., Sweeney, Stephen J., Hosea, Thomas Jeff Cockburn
Format: Article
Published: Institute of Physics Publishing (IOP) 2015
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Online Access:http://eprints.utm.my/id/eprint/55151/
http://dx.doi.org/10.1088/0268-1242/30/9/094015
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