Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
In this paper, we present the Extended Gate Ion Sensitive Field Effect Transistor (EGFET) which has a same function as the Ion Sensitive Field Effect Transistor (ISFET). In contrast to the traditional ISFET, the EGFET retains the original metal/polysilicon portion of the gate electrode and the sensi...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/47503/ http://dx.doi.org/10.1007/978-3-642-35264-5_53 |
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