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Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application

In this paper, we present the Extended Gate Ion Sensitive Field Effect Transistor (EGFET) which has a same function as the Ion Sensitive Field Effect Transistor (ISFET). In contrast to the traditional ISFET, the EGFET retains the original metal/polysilicon portion of the gate electrode and the sensi...

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Main Authors: Hussin, M. R. M., Ismail, Razali, Syono, Ismahadi
Format: Article
Published: 2012
Subjects:
QA Mathematics
Online Access:http://eprints.utm.my/id/eprint/47503/
http://dx.doi.org/10.1007/978-3-642-35264-5_53
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spelling my.utm.475032019-04-25T01:21:57Z http://eprints.utm.my/id/eprint/47503/ Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application Hussin, M. R. M. Ismail, Razali Syono, Ismahadi QA Mathematics In this paper, we present the Extended Gate Ion Sensitive Field Effect Transistor (EGFET) which has a same function as the Ion Sensitive Field Effect Transistor (ISFET). In contrast to the traditional ISFET, the EGFET retains the original metal/polysilicon portion of the gate electrode and the sensing membrane is deposited on the other end extended from the metal/polysilicon gate. This type of ion sensor is suitable for in vivo and in vitro measurement, especially for biosensor applications. Basic concept, fabrication techniques and process/device characterization of EGFET for biosensor development will be discussed in this paper. To support the fabrication process, a simulation study of the process flow using the CoventorWare simulator and the Silvaco Athena process simulator has been done. The results showed good current-voltage characteristics of a multi-finger structure transistor suitable to be used for biosensor transducer. 2012 Article PeerReviewed Hussin, M. R. M. and Ismail, Razali and Syono, Ismahadi (2012) Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application. Communications in Computer and Information Science, 339 CC . pp. 396-403. ISSN 1865-0929 http://dx.doi.org/10.1007/978-3-642-35264-5_53 DOI:10.1007/978-3-642-35264-5_53
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QA Mathematics
spellingShingle QA Mathematics
Hussin, M. R. M.
Ismail, Razali
Syono, Ismahadi
Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
description In this paper, we present the Extended Gate Ion Sensitive Field Effect Transistor (EGFET) which has a same function as the Ion Sensitive Field Effect Transistor (ISFET). In contrast to the traditional ISFET, the EGFET retains the original metal/polysilicon portion of the gate electrode and the sensing membrane is deposited on the other end extended from the metal/polysilicon gate. This type of ion sensor is suitable for in vivo and in vitro measurement, especially for biosensor applications. Basic concept, fabrication techniques and process/device characterization of EGFET for biosensor development will be discussed in this paper. To support the fabrication process, a simulation study of the process flow using the CoventorWare simulator and the Silvaco Athena process simulator has been done. The results showed good current-voltage characteristics of a multi-finger structure transistor suitable to be used for biosensor transducer.
format Article
author Hussin, M. R. M.
Ismail, Razali
Syono, Ismahadi
author_facet Hussin, M. R. M.
Ismail, Razali
Syono, Ismahadi
author_sort Hussin, M. R. M.
title Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
title_short Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
title_full Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
title_fullStr Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
title_full_unstemmed Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
title_sort simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
publishDate 2012
url http://eprints.utm.my/id/eprint/47503/
http://dx.doi.org/10.1007/978-3-642-35264-5_53
_version_ 1643652330889936896
score 13.211869

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