Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD
Various III-V compounds semiconductor Nanowires (NWs) have been grown by using vertical camber MOCVD. The morphology of the NWs has been characterized using FESEM and SEM. In addition to binary and ternary NWs such as GaAs, InP, InxGa1- xAs and AlyGa1-yAs NWs, the quaternary compounds InGaAsP NWs ha...
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| Main Authors: | , , |
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| Format: | Article |
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Persatuan Sains dan Teknologi Keadaan Pepejal Malaysia
2011
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| Online Access: | http://eprints.utm.my/id/eprint/30502/ https://myjms.mohe.gov.my/index.php/masshp/article/view/4828 |
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