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Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD

Various III-V compounds semiconductor Nanowires (NWs) have been grown by using vertical camber MOCVD. The morphology of the NWs has been characterized using FESEM and SEM. In addition to binary and ternary NWs such as GaAs, InP, InxGa1- xAs and AlyGa1-yAs NWs, the quaternary compounds InGaAsP NWs ha...

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Main Authors: Othaman, Zulkafli, Sakrani, Samsudi, Wibowo, E.
Format: Article
Published: Persatuan Sains dan Teknologi Keadaan Pepejal Malaysia 2011
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/30502/
https://myjms.mohe.gov.my/index.php/masshp/article/view/4828
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spelling my.utm.305022022-02-28T13:26:41Z http://eprints.utm.my/id/eprint/30502/ Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD Othaman, Zulkafli Sakrani, Samsudi Wibowo, E. QC Physics Various III-V compounds semiconductor Nanowires (NWs) have been grown by using vertical camber MOCVD. The morphology of the NWs has been characterized using FESEM and SEM. In addition to binary and ternary NWs such as GaAs, InP, InxGa1- xAs and AlyGa1-yAs NWs, the quaternary compounds InGaAsP NWs have been successfully grown. The growth of NWs has been assisted by gold nanocolloids as seed particles. Besides this technique, seed free-assisted growth of NWs has also been demonstrated. InxGa1-xAs NWs have been successfully grown without gold seedparticle assisted. Persatuan Sains dan Teknologi Keadaan Pepejal Malaysia 2011 Article PeerReviewed Othaman, Zulkafli and Sakrani, Samsudi and Wibowo, E. (2011) Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD. Solid State Science and Technology, 19 (2). pp. 275-284. ISSN 0128-7389 https://myjms.mohe.gov.my/index.php/masshp/article/view/4828
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QC Physics
spellingShingle QC Physics
Othaman, Zulkafli
Sakrani, Samsudi
Wibowo, E.
Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD
description Various III-V compounds semiconductor Nanowires (NWs) have been grown by using vertical camber MOCVD. The morphology of the NWs has been characterized using FESEM and SEM. In addition to binary and ternary NWs such as GaAs, InP, InxGa1- xAs and AlyGa1-yAs NWs, the quaternary compounds InGaAsP NWs have been successfully grown. The growth of NWs has been assisted by gold nanocolloids as seed particles. Besides this technique, seed free-assisted growth of NWs has also been demonstrated. InxGa1-xAs NWs have been successfully grown without gold seedparticle assisted.
format Article
author Othaman, Zulkafli
Sakrani, Samsudi
Wibowo, E.
author_facet Othaman, Zulkafli
Sakrani, Samsudi
Wibowo, E.
author_sort Othaman, Zulkafli
title Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD
title_short Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD
title_full Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD
title_fullStr Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD
title_full_unstemmed Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD
title_sort growth of binary, ternary and quatenary iii-v compounds nanowores by mocvd
publisher Persatuan Sains dan Teknologi Keadaan Pepejal Malaysia
publishDate 2011
url http://eprints.utm.my/id/eprint/30502/
https://myjms.mohe.gov.my/index.php/masshp/article/view/4828
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score 13.211869

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