Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD
Various III-V compounds semiconductor Nanowires (NWs) have been grown by using vertical camber MOCVD. The morphology of the NWs has been characterized using FESEM and SEM. In addition to binary and ternary NWs such as GaAs, InP, InxGa1- xAs and AlyGa1-yAs NWs, the quaternary compounds InGaAsP NWs ha...
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| Main Authors: | , , |
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| Format: | Article |
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Persatuan Sains dan Teknologi Keadaan Pepejal Malaysia
2011
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| Online Access: | http://eprints.utm.my/id/eprint/30502/ https://myjms.mohe.gov.my/index.php/masshp/article/view/4828 |
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| Summary: | Various III-V compounds semiconductor Nanowires (NWs) have been grown by using vertical camber MOCVD. The morphology of the NWs has been characterized using FESEM and SEM. In addition to binary and ternary NWs such as GaAs, InP, InxGa1- xAs and AlyGa1-yAs NWs, the quaternary compounds InGaAsP NWs have been successfully grown. The growth of NWs has been assisted by gold nanocolloids as seed particles. Besides this technique, seed free-assisted growth of NWs has also been demonstrated. InxGa1-xAs NWs have been successfully grown without gold seedparticle assisted. |
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