Staff View: RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF sig...

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Main Authors:	Mustafa, Farahiyah, Parimon, Norfarariyanti, Hashim, Abdul Manaf, Abd. Rahman, Shaharin Fadzli, Abdul Rahman, Abdul Rahim, Osman, Mohd. Nizam
Format:	Article
Published:	Springer Berlin / Heidelberg 2010
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/26551/ http://dx.doi.org/10.1007/s00542-010-1099-4
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id	my.utm.26551
record_format	eprints
spelling	my.utm.265512018-10-31T12:36:46Z http://eprints.utm.my/id/eprint/26551/ RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems Mustafa, Farahiyah Parimon, Norfarariyanti Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Abdul Rahman, Abdul Rahim Osman, Mohd. Nizam TK Electrical engineering. Electronics Nuclear engineering The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems. Springer Berlin / Heidelberg 2010-10 Article PeerReviewed Mustafa, Farahiyah and Parimon, Norfarariyanti and Hashim, Abdul Manaf and Abd. Rahman, Shaharin Fadzli and Abdul Rahman, Abdul Rahim and Osman, Mohd. Nizam (2010) RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems. Microsystem Technologies, 16 (10). pp. 1713-1717. ISSN 0946-7076 http://dx.doi.org/10.1007/s00542-010-1099-4 DOI: 10.1007/s00542-010-1099-4
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Mustafa, Farahiyah Parimon, Norfarariyanti Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Abdul Rahman, Abdul Rahim Osman, Mohd. Nizam RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems
description	The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
format	Article
author	Mustafa, Farahiyah Parimon, Norfarariyanti Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Abdul Rahman, Abdul Rahim Osman, Mohd. Nizam
author_facet	Mustafa, Farahiyah Parimon, Norfarariyanti Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Abdul Rahman, Abdul Rahim Osman, Mohd. Nizam
author_sort	Mustafa, Farahiyah
title	RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems
title_short	RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems
title_full	RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems
title_fullStr	RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems
title_full_unstemmed	RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems
title_sort	rf-dc power conversion of schottky diode fabricated on algaas/gaas heterostructure for on-chip rectenna device application in nanosystems
publisher	Springer Berlin / Heidelberg
publishDate	2010
url	http://eprints.utm.my/id/eprint/26551/ http://dx.doi.org/10.1007/s00542-010-1099-4
_version_	1643647792088875008
score	13.211869

RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

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