RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF sig...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
Springer Berlin / Heidelberg
2010
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/26551/ http://dx.doi.org/10.1007/s00542-010-1099-4 |
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