RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF sig...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Published: |
Springer Berlin / Heidelberg
2010
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/26551/ http://dx.doi.org/10.1007/s00542-010-1099-4 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems. |
|---|