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Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET

The rapid scaling of integrated circuit requires further shrinkage of lateral device dimension, which correlates with pillar thickness in vertical structure. This paper investigates the effect of pillar thickness variation on vertical double gate MOSFET (VDGM) fabricated using oblique rotating ion i...

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Main Authors: Ismail, Razali, A. Riyadi, Munawar, Saad, Ismail
Format: Article
Published: Elsevier B.V. 2010
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/26246/
http://dx.doi.org/10.1016/j.mejo.2010.07.004
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spelling my.utm.262462018-10-31T12:20:32Z http://eprints.utm.my/id/eprint/26246/ Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET Ismail, Razali A. Riyadi, Munawar Saad, Ismail TK Electrical engineering. Electronics Nuclear engineering The rapid scaling of integrated circuit requires further shrinkage of lateral device dimension, which correlates with pillar thickness in vertical structure. This paper investigates the effect of pillar thickness variation on vertical double gate MOSFET (VDGM) fabricated using oblique rotating ion implantation (ORI) method. For this purpose, several scenarios of silicon pillar thickness were evaluated for 20–100 nm channel length. The source region was found to merge at pillar thickness below 75 nm, which results in floating body effect and creates isolated region in the middle of pillar. The vertical devices using ORI method show better performance than those with conventional implantation method for all pillar thickness, due to the elimination of corner effect that degrades the gate control. The presence of isolated depletion region in the middle of pillar at floating body increases parasitic effect for higher drain potential. By further reduction of pillar thickness towards fully depleted feature, the increase in gate-to gate charge coupling improves the performance of ORI-basedverticaldoublegateMOSFET, as evident in near-ideal swing value and lower DIBL, compared to the partially depleted and body-tied device. Elsevier B.V. 2010 Article PeerReviewed Ismail, Razali and A. Riyadi, Munawar and Saad, Ismail (2010) Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET. Microelectronics Journal, 41 (12). 827 - 833. ISSN 0026-2692 http://dx.doi.org/10.1016/j.mejo.2010.07.004 DOI:10.1016/j.mejo.2010.07.004
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Ismail, Razali
A. Riyadi, Munawar
Saad, Ismail
Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET
description The rapid scaling of integrated circuit requires further shrinkage of lateral device dimension, which correlates with pillar thickness in vertical structure. This paper investigates the effect of pillar thickness variation on vertical double gate MOSFET (VDGM) fabricated using oblique rotating ion implantation (ORI) method. For this purpose, several scenarios of silicon pillar thickness were evaluated for 20–100 nm channel length. The source region was found to merge at pillar thickness below 75 nm, which results in floating body effect and creates isolated region in the middle of pillar. The vertical devices using ORI method show better performance than those with conventional implantation method for all pillar thickness, due to the elimination of corner effect that degrades the gate control. The presence of isolated depletion region in the middle of pillar at floating body increases parasitic effect for higher drain potential. By further reduction of pillar thickness towards fully depleted feature, the increase in gate-to gate charge coupling improves the performance of ORI-basedverticaldoublegateMOSFET, as evident in near-ideal swing value and lower DIBL, compared to the partially depleted and body-tied device.
format Article
author Ismail, Razali
A. Riyadi, Munawar
Saad, Ismail
author_facet Ismail, Razali
A. Riyadi, Munawar
Saad, Ismail
author_sort Ismail, Razali
title Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET
title_short Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET
title_full Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET
title_fullStr Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET
title_full_unstemmed Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET
title_sort investigation of pillar thickness variation effect on oblique rotating implantation (ori)-based vertical double gate mosfet
publisher Elsevier B.V.
publishDate 2010
url http://eprints.utm.my/id/eprint/26246/
http://dx.doi.org/10.1016/j.mejo.2010.07.004
_version_ 1643647720271904768
score 13.211869

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