Enhanced performance of nanoscale vertical MOSFET by oblique rotating implantation (ORI) and fillet local oxidation (FILOX + ORI) technology
Enhanced symmetrical self-aligned double-gate (DG) vertical MOSFET with low parasitic capacitance is presented. The process utilizes the oblique rotating ion implantation (ORI) method combined with fillet local oxidation (FILOX) technology (FILOX i- ORI). Self-aligned region forms a sharp vertical c...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/15151/ http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:100867 |
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