Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET
The rapid scaling of integrated circuit requires further shrinkage of lateral device dimension, which correlates with pillar thickness in vertical structure. This paper investigates the effect of pillar thickness variation on vertical double gate MOSFET (VDGM) fabricated using oblique rotating ion i...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Elsevier B.V.
2010
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/26246/ http://dx.doi.org/10.1016/j.mejo.2010.07.004 |
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