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Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET

NMOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.

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Bibliographic Details
Main Authors: Saad, Ismail, Ismail, Razali
Format: Conference or Workshop Item
Published: 2007
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/14418/
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spelling my.utm.144182017-08-03T00:54:25Z http://eprints.utm.my/id/eprint/14418/ Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET Saad, Ismail Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering NMOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. 2007 Conference or Workshop Item PeerReviewed Saad, Ismail and Ismail, Razali (2007) Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET. In: IEEE Regional Symposium on Microelectronics (RSM2007), 2007, Penang.
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Saad, Ismail
Ismail, Razali
Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET
description NMOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.
format Conference or Workshop Item
author Saad, Ismail
Ismail, Razali
author_facet Saad, Ismail
Ismail, Razali
author_sort Saad, Ismail
title Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET
title_short Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET
title_full Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET
title_fullStr Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET
title_full_unstemmed Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET
title_sort simulation analysis on the impact of oblique rotating ion implantation (ori) in fabricating novel structure of vertical nmosfet
publishDate 2007
url http://eprints.utm.my/id/eprint/14418/
_version_ 1643646389643640832
score 13.211869

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