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Mitigation of oxygen presence in AlN (100) & (002) growth using RF magnetron sputtering

Aluminium nitride (AlN) nucleation layer (NL) is a useful nitride semiconductor for the growth of Gallium Nitride (GaN) on silicon. Major issues related to the fabrication of AlN films are on its crystallographic orientations and high processing temperatures. In order to fabricate AlN NL at low temp...

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書誌詳細
第一著者:	Bakri, Anis Suhaili
フォーマット:	学位論文
言語:	English English English
出版事項:	2022
主題:	TP Chemical technology
オンライン･アクセス:	http://eprints.uthm.edu.my/8399/1/24p%20ANIS%20SUHAILI%20BAKRI.pdf http://eprints.uthm.edu.my/8399/2/ANIS%20SUHAILI%20BAKRI%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/8399/3/ANIS%20SUHAILI%20BAKRI%20WATERMARK.pdf http://eprints.uthm.edu.my/8399/
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