Process and Characterization of Strained Silicon MOSFET Incorporating Dielectric Pocket (SDP-MOSFET)
In this paper, we propose a fabrication process of Strained Silicon MOSFET incorporating Dielectric Pocket (SDP-MOSFET). By employing TCAD tools, a systematic process simulation in realizing the SDP-MOSFET structure is done successfully. By using vertical and horizontal doping profiles, 120 nm...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/8535/1/012._1569455953.pdf http://eprints.utem.edu.my/id/eprint/8535/ |
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