Optimization of copper(I) thiocyanate as hole transport material for solar cell by scaps-1D numerical analysis
In SSDSSC, various key parameters of CuSCN as HTM were explored using SCAPS-1D simulation software. A layer thickness of 3 µm with a moderate value of interface defect density was obtained yielding 2.56% of PCE in SSDSSC. TiO2 ETM and Ni back contact was found to be the best combination with CuSCN H...
保存先:
主要な著者: | Arith, Faiz, Aliyaselvam, Omsri Vinasha, Mat junos, Siti Aisah, Izlan, Nurhazwani, Mohd Said, Muzalifah, Mustafa, Ahmad Nizamuddin |
---|---|
フォーマット: | 論文 |
言語: | English |
出版事項: |
Przegląd Elektrotechniczny
2022
|
オンライン・アクセス: | http://eprints.utem.edu.my/id/eprint/26789/2/24.PDF http://eprints.utem.edu.my/id/eprint/26789/ http://pe.org.pl/articles/2022/6/24.pdf |
タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|
類似資料
-
SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer
著者:: Arith, Faiz, 等
出版事項: (2022) -
Investigation Of Copper(I)Thiocyanate (CuSCN) As A Hole Transporting Layer For Perovskite Solar Cells Application
著者:: Muhammad Mustafa, Ahmad Nizamuddin, 等
出版事項: (2021) -
Solution Processed Of Solid State HTL Of CuSCN Layer At Low Annealing Temperature For Emerging Solar Cell
著者:: Arith, Faiz, 等
出版事項: (2021) -
Performance comparison of different electron transport layer for perovskite solar cell with NiO as hole transport layer using SCAPS 1D
著者:: Norddin, Nurbahirah, 等
出版事項: (2023) -
Optimal modeling of perovskite solar cell with graphene oxide as hole transport layer using L32(28) Taguchi design
著者:: Salehuddin, Fauziyah, 等
出版事項: (2023)