Optimization of copper(I) thiocyanate as hole transport material for solar cell by scaps-1D numerical analysis
In SSDSSC, various key parameters of CuSCN as HTM were explored using SCAPS-1D simulation software. A layer thickness of 3 µm with a moderate value of interface defect density was obtained yielding 2.56% of PCE in SSDSSC. TiO2 ETM and Ni back contact was found to be the best combination with CuSCN H...
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| Main Authors: | , , , , , |
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| 格式: | Article |
| 语言: | English |
| 出版: |
Przegląd Elektrotechniczny
2022
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| 在线阅读: | http://eprints.utem.edu.my/id/eprint/26789/2/24.PDF http://eprints.utem.edu.my/id/eprint/26789/ http://pe.org.pl/articles/2022/6/24.pdf |
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