Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS
The effect of indium sulfide buffer layer’s geometrical and electro-optical properties on the Copper–Indium–Gallium–diSelenide solar cell performance using numerical simulation is investigated. The numerical simulation software used is a solar cell capacitance simulator in (SCAPS). The innermost imp...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer Verlag
2016
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| Online Access: | http://psasir.upm.edu.my/id/eprint/53400/1/Numerical%20analysis%20of%20In2S3%20layer%20thickness%2C%20band%20gap%20and%20doping%20density%20for%20effective%20performance%20of%20a%20CIGS%20solar%20cell%20using%20SCAPS.pdf http://psasir.upm.edu.my/id/eprint/53400/ https://link.springer.com/article/10.1007/s11664-016-4744-6 |
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http://psasir.upm.edu.my/id/eprint/53400/1/Numerical%20analysis%20of%20In2S3%20layer%20thickness%2C%20band%20gap%20and%20doping%20density%20for%20effective%20performance%20of%20a%20CIGS%20solar%20cell%20using%20SCAPS.pdfhttp://psasir.upm.edu.my/id/eprint/53400/
https://link.springer.com/article/10.1007/s11664-016-4744-6