220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction
In this paper we present the detection of sub-THz radiation at 220 GHz by using 0.35 μm AMS Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The design procedure and experimental setup are shown in order to design and characterize the MOSFETs photoresponse. The experiment and observa...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/15087/1/220GHz%20detection%20using%20035%20uM%20AMS%20mosfet%20as%20sub-THz%20detector%20Drain%20bias%20detraction200.pdf http://eprints.utem.edu.my/id/eprint/15087/ |
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