220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction
In this paper we present the detection of sub-THz radiation at 220 GHz by using 0.35 μm AMS Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The design procedure and experimental setup are shown in order to design and characterize the MOSFETs photoresponse. The experiment and observa...
Saved in:
| Main Authors: | , |
|---|---|
| 格式: | Conference or Workshop Item |
| 语言: | English |
| 出版: |
2012
|
| 主题: | |
| 在线阅读: | http://eprints.utem.edu.my/id/eprint/15087/1/220GHz%20detection%20using%20035%20uM%20AMS%20mosfet%20as%20sub-THz%20detector%20Drain%20bias%20detraction200.pdf http://eprints.utem.edu.my/id/eprint/15087/ |
| 标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
| 总结: | In this paper we present the detection of sub-THz
radiation at 220 GHz by using 0.35 μm AMS Metal Oxide
Semiconductor Field Effect Transistor (MOSFET). The design
procedure and experimental setup are shown in order to
design and characterize the MOSFETs photoresponse. The
experiment and observation of photoresponse are measured
against gate voltage with a drain current bias detraction at
room temperature. The measured photoresponse is a
superposition of a generally increasing response with a
decrease in V cs coupled with a small peak approximately at
threshold and there is evidence that the MOSFET can be a
sensitive sub-THz detector in the room temperature. |
|---|