220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction
In this paper we present the detection of sub-THz radiation at 220 GHz by using 0.35 μm AMS Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The design procedure and experimental setup are shown in order to design and characterize the MOSFETs photoresponse. The experiment and observa...
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my.utem.eprints.150872015-10-22T02:50:48Z http://eprints.utem.edu.my/id/eprint/15087/ 220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction Mohd Azlishah, Othman I., Harrison QA75 Electronic computers. Computer science In this paper we present the detection of sub-THz radiation at 220 GHz by using 0.35 μm AMS Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The design procedure and experimental setup are shown in order to design and characterize the MOSFETs photoresponse. The experiment and observation of photoresponse are measured against gate voltage with a drain current bias detraction at room temperature. The measured photoresponse is a superposition of a generally increasing response with a decrease in V cs coupled with a small peak approximately at threshold and there is evidence that the MOSFET can be a sensitive sub-THz detector in the room temperature. 2012 Conference or Workshop Item PeerReviewed text en http://eprints.utem.edu.my/id/eprint/15087/1/220GHz%20detection%20using%20035%20uM%20AMS%20mosfet%20as%20sub-THz%20detector%20Drain%20bias%20detraction200.pdf Mohd Azlishah, Othman and I., Harrison (2012) 220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction. In: Third International Conference on Intelligent Systems Modelling and Simulation, 8-10 February, 2012, Le Meridien Hotel Kota Kinabalu, Malaysia. (Submitted) |
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QA75 Electronic computers. Computer science Mohd Azlishah, Othman I., Harrison 220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction |
description |
In this paper we present the detection of sub-THz
radiation at 220 GHz by using 0.35 μm AMS Metal Oxide
Semiconductor Field Effect Transistor (MOSFET). The design
procedure and experimental setup are shown in order to
design and characterize the MOSFETs photoresponse. The
experiment and observation of photoresponse are measured
against gate voltage with a drain current bias detraction at
room temperature. The measured photoresponse is a
superposition of a generally increasing response with a
decrease in V cs coupled with a small peak approximately at
threshold and there is evidence that the MOSFET can be a
sensitive sub-THz detector in the room temperature. |
format |
Conference or Workshop Item |
author |
Mohd Azlishah, Othman I., Harrison |
author_facet |
Mohd Azlishah, Othman I., Harrison |
author_sort |
Mohd Azlishah, Othman |
title |
220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction |
title_short |
220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction |
title_full |
220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction |
title_fullStr |
220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction |
title_full_unstemmed |
220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction |
title_sort |
220ghz detection using 035 um ams mosfet as sub-thz detector drain bias detraction |
publishDate |
2012 |
url |
http://eprints.utem.edu.my/id/eprint/15087/1/220GHz%20detection%20using%20035%20uM%20AMS%20mosfet%20as%20sub-THz%20detector%20Drain%20bias%20detraction200.pdf http://eprints.utem.edu.my/id/eprint/15087/ |
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1665905627713503232 |
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13.244367 |