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Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process

Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX....

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Main Authors: Mat Sharif, Khairul Anuar, Zulkifli, Mohd Imran, Muhamad Yassin, Shahrin Zen, Tamchek, Nizam, Aljamimi, Salah Mohammed, Yusoff, A., Mohd Amin, Yusoff, S. A., Siti Shafiqah, Abdul Rashid, Hairul Azhar
Format: Conference or Workshop Item
Language:English
Published: IEEE 2013
Online Access:http://psasir.upm.edu.my/id/eprint/69175/1/Effect%20of%20GeCl4SiCl4%20flow%20ratio%20on%20germanium%20incorporation%20in%20MCVD%20process.pdf
http://psasir.upm.edu.my/id/eprint/69175/
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spelling my.upm.eprints.691752019-06-12T07:36:27Z http://psasir.upm.edu.my/id/eprint/69175/ Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process Mat Sharif, Khairul Anuar Zulkifli, Mohd Imran Muhamad Yassin, Shahrin Zen Tamchek, Nizam Aljamimi, Salah Mohammed Yusoff, A. Mohd Amin, Yusoff S. A., Siti Shafiqah Abdul Rashid, Hairul Azhar Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica. IEEE 2013 Conference or Workshop Item PeerReviewed text en http://psasir.upm.edu.my/id/eprint/69175/1/Effect%20of%20GeCl4SiCl4%20flow%20ratio%20on%20germanium%20incorporation%20in%20MCVD%20process.pdf Mat Sharif, Khairul Anuar and Zulkifli, Mohd Imran and Muhamad Yassin, Shahrin Zen and Tamchek, Nizam and Aljamimi, Salah Mohammed and Yusoff, A. and Mohd Amin, Yusoff and S. A., Siti Shafiqah and Abdul Rashid, Hairul Azhar (2013) Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process. In: 4th International Conference on Photonics (ICP2013), 28-30 Oct. 2013, Equatorial Hotel Melaka, Malaysia. (pp. 284-287). 10.1109/ICP.2013.6687140
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica.
format Conference or Workshop Item
author Mat Sharif, Khairul Anuar
Zulkifli, Mohd Imran
Muhamad Yassin, Shahrin Zen
Tamchek, Nizam
Aljamimi, Salah Mohammed
Yusoff, A.
Mohd Amin, Yusoff
S. A., Siti Shafiqah
Abdul Rashid, Hairul Azhar
spellingShingle Mat Sharif, Khairul Anuar
Zulkifli, Mohd Imran
Muhamad Yassin, Shahrin Zen
Tamchek, Nizam
Aljamimi, Salah Mohammed
Yusoff, A.
Mohd Amin, Yusoff
S. A., Siti Shafiqah
Abdul Rashid, Hairul Azhar
Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process
author_facet Mat Sharif, Khairul Anuar
Zulkifli, Mohd Imran
Muhamad Yassin, Shahrin Zen
Tamchek, Nizam
Aljamimi, Salah Mohammed
Yusoff, A.
Mohd Amin, Yusoff
S. A., Siti Shafiqah
Abdul Rashid, Hairul Azhar
author_sort Mat Sharif, Khairul Anuar
title Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process
title_short Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process
title_full Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process
title_fullStr Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process
title_full_unstemmed Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process
title_sort effect of gecl4/sicl4 flow ratio on germanium incorporation in mcvd process
publisher IEEE
publishDate 2013
url http://psasir.upm.edu.my/id/eprint/69175/1/Effect%20of%20GeCl4SiCl4%20flow%20ratio%20on%20germanium%20incorporation%20in%20MCVD%20process.pdf
http://psasir.upm.edu.my/id/eprint/69175/
_version_ 1643839417341706240
score 13.211869

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