Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process
Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX....
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| Main Authors: | , , , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE
2013
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| Online Access: | http://psasir.upm.edu.my/id/eprint/69175/1/Effect%20of%20GeCl4SiCl4%20flow%20ratio%20on%20germanium%20incorporation%20in%20MCVD%20process.pdf http://psasir.upm.edu.my/id/eprint/69175/ |
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| Summary: | Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica. |
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