Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography
The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM)...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE
2011
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| Online Access: | http://psasir.upm.edu.my/id/eprint/68199/1/Field%20effect%20in%20silicon%20nanostructure%20fabricated%20by%20atomic%20force%20microscopy%20nano%20lithography.pdf http://psasir.upm.edu.my/id/eprint/68199/ |
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