Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor
This study examines the susceptibility of hot carrier effects on various Heterostructures Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor (SiGe PMOSFET) such as Strained SiGe Channel and Strained SiGe Source/Drain PMOSFET. The results were compared with Si Channel PMOSF...
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| フォーマット: | 学位論文 |
| 言語: | English English |
| 出版事項: |
2004
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| オンライン･アクセス: | http://psasir.upm.edu.my/id/eprint/528/1/549631_FK_2004_89.pdf http://psasir.upm.edu.my/id/eprint/528/ |
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