Cover Image

Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor

This study examines the susceptibility of hot carrier effects on various Heterostructures Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor (SiGe PMOSFET) such as Strained SiGe Channel and Strained SiGe Source/Drain PMOSFET. The results were compared with Si Channel PMOSF...

Full description

Saved in:
Bibliographic Details
Main Author: Gan, Kenny Chye Siong
Format: Thesis
Language:English
English
Published: 2004
Online Access:http://psasir.upm.edu.my/id/eprint/528/1/549631_FK_2004_89.pdf
http://psasir.upm.edu.my/id/eprint/528/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.upm.eprints.528
record_format eprints
spelling my.upm.eprints.5282013-05-27T06:49:01Z http://psasir.upm.edu.my/id/eprint/528/ Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor Gan, Kenny Chye Siong This study examines the susceptibility of hot carrier effects on various Heterostructures Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor (SiGe PMOSFET) such as Strained SiGe Channel and Strained SiGe Source/Drain PMOSFET. The results were compared with Si Channel PMOSFET. The hot carrier effect of these structures was investigated in the aspect of material, structural and mobility via impact ionization. Simulations were performed with ATLAS/BLAZE 2D to design the device structures and to simulate the hot carrier effects indicated by substrate and gate current. The SiGe heterostructure PMOSFETs have higher hot carrier effects as verified by substrate current with an increase of 131% for Strained SiGe Channel PMOSFET and 199% for Strained SiGe Source and Drain PMOSFET with 25% Ge fraction respectively as compare to the Si PMOSFET. The increase of hot carrier effects in SiGe structure is due to higher impact ionization rate approximately an order of magnitude in SiGe as compared to Si. The incorporation of Si-cap in the SiGe heterostructure enhanced the suppression of hot carrier injected into the gate. However the buried layer of Strained SiGe channel PMOSFET suppresses the impact ionization rate to a certain level of thickness. Beyond that impact ionization increases with the Ge content as verified by substrate current. On the other hand the increase of Ge content suppressed further the hot carrier injection into the gate due to higher valence band energy between the SiGe channel and the Si-cap. As a thicker layer of p+SiGe in the drain region is fabricated in the Strained SiGe Source and Drain PMOSFET result shows an enhancement in the hot carrier effect. This is caused by a higher impact ionization rate in SiGe and also most area of impact ionization is covered as the thickness of SiGe layer is increased. In the aspect of mobility, the high mobility SiGe channel PMOSFET enhanced further the hot carrier effects through the enhancement of current drive whereas hot carrier effects decreases in the Strained SiGe Source and Drain PMOSFET despite setting a higher low field mobility in the p+ SiGe source and drain region. In fact the current drive in Strained SiGe Source and Drain PMOSFET is lower than Si Channel PMOSFET due to the valence band discontinuity that causes a higher barrier height for holes flowing from source to drain. This indicated that the hot carrier is also affected by current drive. 2004-11 Thesis NonPeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/528/1/549631_FK_2004_89.pdf Gan, Kenny Chye Siong (2004) Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor. Masters thesis, Universiti Putra Malaysia. English
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
English
description This study examines the susceptibility of hot carrier effects on various Heterostructures Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor (SiGe PMOSFET) such as Strained SiGe Channel and Strained SiGe Source/Drain PMOSFET. The results were compared with Si Channel PMOSFET. The hot carrier effect of these structures was investigated in the aspect of material, structural and mobility via impact ionization. Simulations were performed with ATLAS/BLAZE 2D to design the device structures and to simulate the hot carrier effects indicated by substrate and gate current. The SiGe heterostructure PMOSFETs have higher hot carrier effects as verified by substrate current with an increase of 131% for Strained SiGe Channel PMOSFET and 199% for Strained SiGe Source and Drain PMOSFET with 25% Ge fraction respectively as compare to the Si PMOSFET. The increase of hot carrier effects in SiGe structure is due to higher impact ionization rate approximately an order of magnitude in SiGe as compared to Si. The incorporation of Si-cap in the SiGe heterostructure enhanced the suppression of hot carrier injected into the gate. However the buried layer of Strained SiGe channel PMOSFET suppresses the impact ionization rate to a certain level of thickness. Beyond that impact ionization increases with the Ge content as verified by substrate current. On the other hand the increase of Ge content suppressed further the hot carrier injection into the gate due to higher valence band energy between the SiGe channel and the Si-cap. As a thicker layer of p+SiGe in the drain region is fabricated in the Strained SiGe Source and Drain PMOSFET result shows an enhancement in the hot carrier effect. This is caused by a higher impact ionization rate in SiGe and also most area of impact ionization is covered as the thickness of SiGe layer is increased. In the aspect of mobility, the high mobility SiGe channel PMOSFET enhanced further the hot carrier effects through the enhancement of current drive whereas hot carrier effects decreases in the Strained SiGe Source and Drain PMOSFET despite setting a higher low field mobility in the p+ SiGe source and drain region. In fact the current drive in Strained SiGe Source and Drain PMOSFET is lower than Si Channel PMOSFET due to the valence band discontinuity that causes a higher barrier height for holes flowing from source to drain. This indicated that the hot carrier is also affected by current drive.
format Thesis
author Gan, Kenny Chye Siong
spellingShingle Gan, Kenny Chye Siong
Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor
author_facet Gan, Kenny Chye Siong
author_sort Gan, Kenny Chye Siong
title Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor
title_short Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor
title_full Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor
title_fullStr Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor
title_full_unstemmed Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor
title_sort hot carrier studies on heterostructure silicon germanium p-channel metal oxide semiconductor field effect transistor
publishDate 2004
url http://psasir.upm.edu.my/id/eprint/528/1/549631_FK_2004_89.pdf
http://psasir.upm.edu.my/id/eprint/528/
_version_ 1643821849417613312
score 13.211869

Similar Items