High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications
The leakage current, avalanche gain, excess noise and frequency response of InAs avalanche photodiodes (APDs) were investigated. Despite having a narrow bandgap, InAs APDs, which were fabricated using optimized fabrication procedures and surface passivation technique, were able to provide reasonably...
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| Main Authors: | , , |
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| Format: | Conference Proceeding |
| Language: | en_US |
| Published: |
2017
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