Cover Image

High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications

The leakage current, avalanche gain, excess noise and frequency response of InAs avalanche photodiodes (APDs) were investigated. Despite having a narrow bandgap, InAs APDs, which were fabricated using optimized fabrication procedures and surface passivation technique, were able to provide reasonably...

Full description

Saved in:
Bibliographic Details
Main Authors: Ker, P.J., Tan, C.H., David, J.P.R.
Format: Conference Proceeding
Language:en_US
Published: 2017
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.uniten.dspace-5984
record_format dspace
spelling my.uniten.dspace-59842018-02-07T07:48:10Z High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications Ker, P.J. Tan, C.H. David, J.P.R. The leakage current, avalanche gain, excess noise and frequency response of InAs avalanche photodiodes (APDs) were investigated. Despite having a narrow bandgap, InAs APDs, which were fabricated using optimized fabrication procedures and surface passivation technique, were able to provide reasonably low leakage current for practical applications. The exponentially rising avalanche gain with increasing bias voltage without a classical avalanche breakdown exhibited its electron-dominated impact ionization characteristic and avalanche gain as high as 165 was measured. The excess noise or avalanche noise was found to be independent of gain and temperature with the excess noise factors fluctuating between 1.45 and 1.6 at high gain. The 3-dB bandwidth of InAs APDs was determined to be ~ 3.5 - 4 GHz and it was highly possible that the surface passivation dielectric and the unavailability of a lattice-matched semi-insulating substrate were the major limiting factors. However, unlike other mature APDs technologies, the 3-dB bandwidth of InAs APDs remained constant even up to the highest achievable avalanche gain, providing a record high gain-bandwidth product of ~ 580 GHz. © 2013 IEEE. 2017-12-08T07:48:14Z 2017-12-08T07:48:14Z 2013 Conference Proceeding 10.1109/ICP.2013.6687073 en_US In 4th International Conference on Photonics, ICP 2013 - Conference Proceeding (pp. 78-80). [6687073]
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language en_US
description The leakage current, avalanche gain, excess noise and frequency response of InAs avalanche photodiodes (APDs) were investigated. Despite having a narrow bandgap, InAs APDs, which were fabricated using optimized fabrication procedures and surface passivation technique, were able to provide reasonably low leakage current for practical applications. The exponentially rising avalanche gain with increasing bias voltage without a classical avalanche breakdown exhibited its electron-dominated impact ionization characteristic and avalanche gain as high as 165 was measured. The excess noise or avalanche noise was found to be independent of gain and temperature with the excess noise factors fluctuating between 1.45 and 1.6 at high gain. The 3-dB bandwidth of InAs APDs was determined to be ~ 3.5 - 4 GHz and it was highly possible that the surface passivation dielectric and the unavailability of a lattice-matched semi-insulating substrate were the major limiting factors. However, unlike other mature APDs technologies, the 3-dB bandwidth of InAs APDs remained constant even up to the highest achievable avalanche gain, providing a record high gain-bandwidth product of ~ 580 GHz. © 2013 IEEE.
format Conference Proceeding
author Ker, P.J.
Tan, C.H.
David, J.P.R.
spellingShingle Ker, P.J.
Tan, C.H.
David, J.P.R.
High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications
author_facet Ker, P.J.
Tan, C.H.
David, J.P.R.
author_sort Ker, P.J.
title High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications
title_short High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications
title_full High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications
title_fullStr High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications
title_full_unstemmed High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications
title_sort high speed low noise inas electron avalanche photodiodes for telecommunication and infrared sensing applications
publishDate 2017
_version_ 1644493815304683520
score 13.211869

Similar Items