Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging
The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. S...
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my.uniten.dspace-59742018-02-07T02:17:42Z Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging Ker, P.J. Marshall, A.R.J. Tan, C.H. David, J.P.R. The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging. © 2016 IEEE. 2017-12-08T07:48:10Z 2017-12-08T07:48:10Z 2016 Conference Proceeding 10.1109/ICP.2016.7510018 en_US In 2016 IEEE 6th International Conference on Photonics, ICP 2016 [7510018] Institute of Electrical and Electronics Engineers In |
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The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging. © 2016 IEEE. |
| format |
Conference Proceeding |
| author |
Ker, P.J. Marshall, A.R.J. Tan, C.H. David, J.P.R. |
| spellingShingle |
Ker, P.J. Marshall, A.R.J. Tan, C.H. David, J.P.R. Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| author_facet |
Ker, P.J. Marshall, A.R.J. Tan, C.H. David, J.P.R. |
| author_sort |
Ker, P.J. |
| title |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_short |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_full |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_fullStr |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_full_unstemmed |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_sort |
surface passivation of inas avalanche photodiodes for low-noise infrared imaging |
| publishDate |
2017 |
| _version_ |
1644493812921270272 |
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13.211869 |