Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers
The effect of backside films namely silicon dioxide, silicon nitride and bare silicon on Rapid Thermal Oxidation (RTO) growth of silicon wafers by rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus of...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2017
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