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Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers

The effect of backside films namely silicon dioxide, silicon nitride and bare silicon on Rapid Thermal Oxidation (RTO) growth of silicon wafers by rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus of...

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Main Authors: Omar, Abdullah b., Ahmad, Ibrahim b., Ahmad, I.
Format: Article
Language:English
Published: 2017
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spelling my.uniten.dspace-53382018-04-03T02:17:22Z Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers Omar, Abdullah b. Ahmad, Ibrahim b. Ahmad, I. The effect of backside films namely silicon dioxide, silicon nitride and bare silicon on Rapid Thermal Oxidation (RTO) growth of silicon wafers by rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus of 4×10 14 atoms/cm 2 by Ion Implantation at 100 keV and the undoped. The RTO thickness has been measured by ellipsometer and the target thickness was 10 nm. The rapid thermal annealing system used was AG Associates 2146 Heatpulse model. The temperature chosen was 1100 °C. It has been demonstrated that thinner RTO thickness could be obtained by having sufficient silicon dioxide film at the backside, however the presence of doped backside layers has no effect on the tunnel oxide growth. 2017-11-15T02:57:37Z 2017-11-15T02:57:37Z 1998 Article https://www.scopus.com/record/display.uri?eid=2-s2.0-0032231818&origin=resultslist&sort=plf-f&src=s&st1=Effect+of+backside+films+on+Rapid+Thermal+Oxidation&st2=&sid=e71f6639b3dc1dfb438926008aa8f559&sot=b&sdt=b&sl=66&s=TITLE-ABS-KEY%28Effect+of+backside+films+on+Rapid+Thermal+Oxidation%29&relpos=0&citeCnt=1&searchTerm= en
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language English
description The effect of backside films namely silicon dioxide, silicon nitride and bare silicon on Rapid Thermal Oxidation (RTO) growth of silicon wafers by rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus of 4×10 14 atoms/cm 2 by Ion Implantation at 100 keV and the undoped. The RTO thickness has been measured by ellipsometer and the target thickness was 10 nm. The rapid thermal annealing system used was AG Associates 2146 Heatpulse model. The temperature chosen was 1100 °C. It has been demonstrated that thinner RTO thickness could be obtained by having sufficient silicon dioxide film at the backside, however the presence of doped backside layers has no effect on the tunnel oxide growth.
format Article
author Omar, Abdullah b.
Ahmad, Ibrahim b.
Ahmad, I.
spellingShingle Omar, Abdullah b.
Ahmad, Ibrahim b.
Ahmad, I.
Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers
author_facet Omar, Abdullah b.
Ahmad, Ibrahim b.
Ahmad, I.
author_sort Omar, Abdullah b.
title Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers
title_short Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers
title_full Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers
title_fullStr Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers
title_full_unstemmed Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers
title_sort effect of backside films on rapid thermal oxidation (rto) growth on silicon wafers
publishDate 2017
_version_ 1644493661817274368
score 13.211869

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