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Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation

This paper presents a method to form thick spin-on glass (SOG) sacrificial layer for accelerometer encapsulation fabrication. Siloxane type SOG is applied on blank wafers and accelerometer patterns by multiple spin, bake, and cure processes. A series of gradual hot plate baking up to 250°C are exper...

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Main Authors: Hamzah, A.A., Majlis, B.Y., Ahmad, I.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5319
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spelling my.uniten.dspace-53192017-11-15T02:57:30Z Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation Hamzah, A.A. Majlis, B.Y. Ahmad, I. This paper presents a method to form thick spin-on glass (SOG) sacrificial layer for accelerometer encapsulation fabrication. Siloxane type SOG is applied on blank wafers and accelerometer patterns by multiple spin, bake, and cure processes. A series of gradual hot plate baking up to 250°C are experimented for each spun layer. After multiple spin and bake, the SOG layers are etched back in hydrofluoric acid (HF) solution of various concentrations to form rectangular encapsulation bases. 25 samples are prepared for SOG thickness uniformity characterization. Thickness measurements are taken for each sample using thin-film mapper. Surface profiler measurements are subsequently taken using Tencor surface profiler. Scanning electron microscope (SEM) is used to observe surface and etch wall profile after HF etching. No surface cracking was visible under SEM observation. Shallow trench patterns are apparent on SOG deposited on accelerometer pattern. The average sample thickness is 5 urn with 3.7% thickness variation across samples. The average variation within each sample is 0.14 μm with an average of 2.6% thickness variation within sample. These thickness variations are acceptable for encapsulation structure deposition. 2017-11-15T02:57:30Z 2017-11-15T02:57:30Z 2006 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5319
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description This paper presents a method to form thick spin-on glass (SOG) sacrificial layer for accelerometer encapsulation fabrication. Siloxane type SOG is applied on blank wafers and accelerometer patterns by multiple spin, bake, and cure processes. A series of gradual hot plate baking up to 250°C are experimented for each spun layer. After multiple spin and bake, the SOG layers are etched back in hydrofluoric acid (HF) solution of various concentrations to form rectangular encapsulation bases. 25 samples are prepared for SOG thickness uniformity characterization. Thickness measurements are taken for each sample using thin-film mapper. Surface profiler measurements are subsequently taken using Tencor surface profiler. Scanning electron microscope (SEM) is used to observe surface and etch wall profile after HF etching. No surface cracking was visible under SEM observation. Shallow trench patterns are apparent on SOG deposited on accelerometer pattern. The average sample thickness is 5 urn with 3.7% thickness variation across samples. The average variation within each sample is 0.14 μm with an average of 2.6% thickness variation within sample. These thickness variations are acceptable for encapsulation structure deposition.
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author Hamzah, A.A.
Majlis, B.Y.
Ahmad, I.
spellingShingle Hamzah, A.A.
Majlis, B.Y.
Ahmad, I.
Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation
author_facet Hamzah, A.A.
Majlis, B.Y.
Ahmad, I.
author_sort Hamzah, A.A.
title Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation
title_short Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation
title_full Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation
title_fullStr Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation
title_full_unstemmed Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation
title_sort formation of thick spin-on glass (sog) sacrificial layer for capacitive accelerometer encapsulation
publishDate 2017
url http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5319
_version_ 1644493656274501632
score 13.211869

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