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Study of lifetime prediction of N-MOS transistor due to hot carrier effect

This study discusses a technique to define the reliability and predict the lifetime of NMOS transistor through stressing and analyzing process by using Agilent 4070 Series equipment and xHCI software at wafer level. The stressing process uses direct current stressing method while Takeda and Hu model...

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書誌詳細
主要な著者:	Ahmad, I., Kornain, Z., Idros, M.F.M.
フォーマット:
出版事項:	2017
オンライン･アクセス:	http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5300
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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