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Study of lifetime prediction of N-MOS transistor due to hot carrier effect

This study discusses a technique to define the reliability and predict the lifetime of NMOS transistor through stressing and analyzing process by using Agilent 4070 Series equipment and xHCI software at wafer level. The stressing process uses direct current stressing method while Takeda and Hu model...

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Main Authors: Ahmad, I., Kornain, Z., Idros, M.F.M.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5300
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spelling my.uniten.dspace-53002017-11-15T02:57:23Z Study of lifetime prediction of N-MOS transistor due to hot carrier effect Ahmad, I. Kornain, Z. Idros, M.F.M. This study discusses a technique to define the reliability and predict the lifetime of NMOS transistor through stressing and analyzing process by using Agilent 4070 Series equipment and xHCI software at wafer level. The stressing process uses direct current stressing method while Takeda and Hu models are used in analysis process. The result of the experiment is in the graph form and it depends on the analysis method which is can be referred to both Takeda and Hu models. The minimum lifetime prediction was 860 hours by using Takeda model as compared to 790 hours using Hu model. The different result between Takeda and Hu model was about 8% only and this allowed both Takeda and Hu models to be used in lifetime prediction of NMOS transistor. For the conclusion, by referring to this lifetime prediction graph, any operating voltage of transistor can predict the lifetime. © 2006 IEEE. 2017-11-15T02:57:23Z 2017-11-15T02:57:23Z 2006 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5300
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description This study discusses a technique to define the reliability and predict the lifetime of NMOS transistor through stressing and analyzing process by using Agilent 4070 Series equipment and xHCI software at wafer level. The stressing process uses direct current stressing method while Takeda and Hu models are used in analysis process. The result of the experiment is in the graph form and it depends on the analysis method which is can be referred to both Takeda and Hu models. The minimum lifetime prediction was 860 hours by using Takeda model as compared to 790 hours using Hu model. The different result between Takeda and Hu model was about 8% only and this allowed both Takeda and Hu models to be used in lifetime prediction of NMOS transistor. For the conclusion, by referring to this lifetime prediction graph, any operating voltage of transistor can predict the lifetime. © 2006 IEEE.
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author Ahmad, I.
Kornain, Z.
Idros, M.F.M.
spellingShingle Ahmad, I.
Kornain, Z.
Idros, M.F.M.
Study of lifetime prediction of N-MOS transistor due to hot carrier effect
author_facet Ahmad, I.
Kornain, Z.
Idros, M.F.M.
author_sort Ahmad, I.
title Study of lifetime prediction of N-MOS transistor due to hot carrier effect
title_short Study of lifetime prediction of N-MOS transistor due to hot carrier effect
title_full Study of lifetime prediction of N-MOS transistor due to hot carrier effect
title_fullStr Study of lifetime prediction of N-MOS transistor due to hot carrier effect
title_full_unstemmed Study of lifetime prediction of N-MOS transistor due to hot carrier effect
title_sort study of lifetime prediction of n-mos transistor due to hot carrier effect
publishDate 2017
url http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5300
_version_ 1644493650320687104
score 13.211869

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