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Improved series resistance model for CMOS ESD diodes

Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral...

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Main Authors: Kamal, N.B., Kordesch, A.V., Ahmad, I.B.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5263
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spelling my.uniten.dspace-52632017-11-15T02:57:08Z Improved series resistance model for CMOS ESD diodes Kamal, N.B. Kordesch, A.V. Ahmad, I.B. Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit designers. Accurate series resistance in the diode forward region is critical especially for designing ESD protection circuits. This paper analyzes the effect of diode width and P to N (P active to N-tap active) distance on the extracted model Rs value in the standard level 3 SPICE diode model. Diodes of various widths and P-N distance were designed and fabricated in a CMOS 130 nm technology to get actual data measurements. Parameter extraction was done using the commercial BSIMProPlus model extraction software. Different diode widths and P-N distances produce forward IV curves with different slope, due to the changing series resistance. The slope represents the incremental series resistance. This study has been done with two types of diode, PN diode (P active in Nwell diode) and NP diode (N active in Pwell diode). The extracted Rs value shows a linear relationship to P-N distance and is proportional to inverse drawn width. © 2008 IEEE. 2017-11-15T02:57:08Z 2017-11-15T02:57:08Z 2008 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5263
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit designers. Accurate series resistance in the diode forward region is critical especially for designing ESD protection circuits. This paper analyzes the effect of diode width and P to N (P active to N-tap active) distance on the extracted model Rs value in the standard level 3 SPICE diode model. Diodes of various widths and P-N distance were designed and fabricated in a CMOS 130 nm technology to get actual data measurements. Parameter extraction was done using the commercial BSIMProPlus model extraction software. Different diode widths and P-N distances produce forward IV curves with different slope, due to the changing series resistance. The slope represents the incremental series resistance. This study has been done with two types of diode, PN diode (P active in Nwell diode) and NP diode (N active in Pwell diode). The extracted Rs value shows a linear relationship to P-N distance and is proportional to inverse drawn width. © 2008 IEEE.
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author Kamal, N.B.
Kordesch, A.V.
Ahmad, I.B.
spellingShingle Kamal, N.B.
Kordesch, A.V.
Ahmad, I.B.
Improved series resistance model for CMOS ESD diodes
author_facet Kamal, N.B.
Kordesch, A.V.
Ahmad, I.B.
author_sort Kamal, N.B.
title Improved series resistance model for CMOS ESD diodes
title_short Improved series resistance model for CMOS ESD diodes
title_full Improved series resistance model for CMOS ESD diodes
title_fullStr Improved series resistance model for CMOS ESD diodes
title_full_unstemmed Improved series resistance model for CMOS ESD diodes
title_sort improved series resistance model for cmos esd diodes
publishDate 2017
url http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5263
_version_ 1644493631956975616
score 13.223943

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