Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films
The growth of highly crystalline c-plane AlN �002� is extremely difficult, entailing high temperature and ultra-high vacuum condition. In sputtering technique, the addition of nitrogen into argon sputtering gas can significantly assist the formation of AlN �002� at low temperature. We incorporated p...
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my.uniten.dspace-343242024-10-14T11:19:03Z Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films Samad M.I.A. Noor M.M. Nayan N. Bakar A.S.A. Mansor M. Zuhdi A.W.M. Hamzah A.A. Latif R. 57768220600 55330047100 8881976900 55752997100 57222998145 56589966300 12792679600 36675085500 Aluminium nitride Argon plasma Crystallography Piezoelectric force microscopy (PFM) Radio frequency (RF) sputtering Argon Crystal structure Crystallography Gas adsorption III-V semiconductors Nitrogen Oxygen Piezoelectricity Single crystals Sputtering Temperature Thin films AlN thin films Argon plasmas Crystals structures Micro-structural properties Oxygen content Piezoelectric force microscopy Radio frequency sputtering Sputtering gas Thin film layers Aluminum nitride The growth of highly crystalline c-plane AlN �002� is extremely difficult, entailing high temperature and ultra-high vacuum condition. In sputtering technique, the addition of nitrogen into argon sputtering gas can significantly assist the formation of AlN �002� at low temperature. We incorporated purified nitrogen gas and observed the consistent formation of single crystal �002� AlN thin film layer sputter-deposited on Mo/Si substrate from the AlN ceramic target. Small presence of oxygen content within AlN crystal relates to the preferential growth of AlN �002�. High oxygen content in AlN thin film due to the use of unpurified nitrogen and argon only sputtering gas prefers the formation of AlN �100�. Different AlN crystal structure has shown distinct thin film properties and piezoelectric response. This work provides a method to control the crystal structure of the sputter-deposited AlN thin film layer, either c-plane AlN �002�, a-plane AlN �100� or polycrystalline AlN. � 2022 Acta Materialia Inc. Final 2024-10-14T03:19:03Z 2024-10-14T03:19:03Z 2023 Article 10.1016/j.scriptamat.2022.115228 2-s2.0-85143883803 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85143883803&doi=10.1016%2fj.scriptamat.2022.115228&partnerID=40&md5=288193ba460352dea504786b1c696221 https://irepository.uniten.edu.my/handle/123456789/34324 226 115228 Acta Materialia Inc Scopus |
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Aluminium nitride Argon plasma Crystallography Piezoelectric force microscopy (PFM) Radio frequency (RF) sputtering Argon Crystal structure Crystallography Gas adsorption III-V semiconductors Nitrogen Oxygen Piezoelectricity Single crystals Sputtering Temperature Thin films AlN thin films Argon plasmas Crystals structures Micro-structural properties Oxygen content Piezoelectric force microscopy Radio frequency sputtering Sputtering gas Thin film layers Aluminum nitride |
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Aluminium nitride Argon plasma Crystallography Piezoelectric force microscopy (PFM) Radio frequency (RF) sputtering Argon Crystal structure Crystallography Gas adsorption III-V semiconductors Nitrogen Oxygen Piezoelectricity Single crystals Sputtering Temperature Thin films AlN thin films Argon plasmas Crystals structures Micro-structural properties Oxygen content Piezoelectric force microscopy Radio frequency sputtering Sputtering gas Thin film layers Aluminum nitride Samad M.I.A. Noor M.M. Nayan N. Bakar A.S.A. Mansor M. Zuhdi A.W.M. Hamzah A.A. Latif R. Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| description |
The growth of highly crystalline c-plane AlN �002� is extremely difficult, entailing high temperature and ultra-high vacuum condition. In sputtering technique, the addition of nitrogen into argon sputtering gas can significantly assist the formation of AlN �002� at low temperature. We incorporated purified nitrogen gas and observed the consistent formation of single crystal �002� AlN thin film layer sputter-deposited on Mo/Si substrate from the AlN ceramic target. Small presence of oxygen content within AlN crystal relates to the preferential growth of AlN �002�. High oxygen content in AlN thin film due to the use of unpurified nitrogen and argon only sputtering gas prefers the formation of AlN �100�. Different AlN crystal structure has shown distinct thin film properties and piezoelectric response. This work provides a method to control the crystal structure of the sputter-deposited AlN thin film layer, either c-plane AlN �002�, a-plane AlN �100� or polycrystalline AlN. � 2022 Acta Materialia Inc. |
| author2 |
57768220600 |
| author_facet |
57768220600 Samad M.I.A. Noor M.M. Nayan N. Bakar A.S.A. Mansor M. Zuhdi A.W.M. Hamzah A.A. Latif R. |
| format |
Article |
| author |
Samad M.I.A. Noor M.M. Nayan N. Bakar A.S.A. Mansor M. Zuhdi A.W.M. Hamzah A.A. Latif R. |
| author_sort |
Samad M.I.A. |
| title |
Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_short |
Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_full |
Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_fullStr |
Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_full_unstemmed |
Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_sort |
effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of aln thin films |
| publisher |
Acta Materialia Inc |
| publishDate |
2024 |
| _version_ |
1814061175434903552 |
| score |
13.222552 |