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Optimization of process parameters for Si lateral PIN photodiode

This paper is about four optimization factors of process parameters, namely the intrinsic region length, photoabsorption layer thickness, the incident optical power and the bias voltage in a Si lateral pin-photodiode so as to obtain high frequency response and responsivity. Optimization of these par...

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Main Authors:	Menon P.S., Kalthom Tasirin S., Ahmad I., Fazlili Abdullah S.
其他作者:	57201289731
格式:	Article
出版:	2023
主题:	Lateral P-i-n Photodiode Silvaco Simulation Taguchi method
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