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Optimization of process parameters for Si lateral PIN photodiode

This paper is about four optimization factors of process parameters, namely the intrinsic region length, photoabsorption layer thickness, the incident optical power and the bias voltage in a Si lateral pin-photodiode so as to obtain high frequency response and responsivity. Optimization of these par...

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Main Authors: Menon P.S., Kalthom Tasirin S., Ahmad I., Fazlili Abdullah S.
Other Authors: 57201289731
Format: Article
Published: 2023
Subjects:
Lateral
P-i-n
Photodiode
Silvaco
Simulation
Taguchi method
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spelling my.uniten.dspace-299992023-12-29T15:43:56Z Optimization of process parameters for Si lateral PIN photodiode Menon P.S. Kalthom Tasirin S. Ahmad I. Fazlili Abdullah S. 57201289731 55602329100 12792216600 14319069500 Lateral P-i-n Photodiode Silvaco Simulation Taguchi method This paper is about four optimization factors of process parameters, namely the intrinsic region length, photoabsorption layer thickness, the incident optical power and the bias voltage in a Si lateral pin-photodiode so as to obtain high frequency response and responsivity. Optimization of these parameters is based on Taguchi optimization method. In terms of simulation for the fabrication and device electrical characterization, ATHENA and ATLAS software from Silvaco Int. were used respectively. The identified factors have three best levels which give different combination based on L9 orthogonal array by Taguchi optimization method. In order to find the optimum factors and levels, signal-to-noise ratios (SNR) of larger-the-better (LTB) was applied. The analysis showed that the entire identified factors gave significant effect on the optical properties of the Si lateral pin-photodiode. It is revealed that the best result for responsivity and frequency response after the optimization approaches were 0.62A/W and 13.1 GHz respectively which respond to the optimized value for intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted using Taguchi optimization method. � IDOSI Publications, 2013. Final 2023-12-29T07:43:56Z 2023-12-29T07:43:56Z 2013 Article 10.5829/idosi.wasj.2013.21.mae.99930 2-s2.0-84879179128 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84879179128&doi=10.5829%2fidosi.wasj.2013.21.mae.99930&partnerID=40&md5=f790b41a4cf1bd70d80de7133901841d https://irepository.uniten.edu.my/handle/123456789/29999 21 SPECIAL ISSUE1 98 103 Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic Lateral
P-i-n
Photodiode
Silvaco
Simulation
Taguchi method
spellingShingle Lateral
P-i-n
Photodiode
Silvaco
Simulation
Taguchi method
Menon P.S.
Kalthom Tasirin S.
Ahmad I.
Fazlili Abdullah S.
Optimization of process parameters for Si lateral PIN photodiode
description This paper is about four optimization factors of process parameters, namely the intrinsic region length, photoabsorption layer thickness, the incident optical power and the bias voltage in a Si lateral pin-photodiode so as to obtain high frequency response and responsivity. Optimization of these parameters is based on Taguchi optimization method. In terms of simulation for the fabrication and device electrical characterization, ATHENA and ATLAS software from Silvaco Int. were used respectively. The identified factors have three best levels which give different combination based on L9 orthogonal array by Taguchi optimization method. In order to find the optimum factors and levels, signal-to-noise ratios (SNR) of larger-the-better (LTB) was applied. The analysis showed that the entire identified factors gave significant effect on the optical properties of the Si lateral pin-photodiode. It is revealed that the best result for responsivity and frequency response after the optimization approaches were 0.62A/W and 13.1 GHz respectively which respond to the optimized value for intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted using Taguchi optimization method. � IDOSI Publications, 2013.
author2 57201289731
author_facet 57201289731
Menon P.S.
Kalthom Tasirin S.
Ahmad I.
Fazlili Abdullah S.
format Article
author Menon P.S.
Kalthom Tasirin S.
Ahmad I.
Fazlili Abdullah S.
author_sort Menon P.S.
title Optimization of process parameters for Si lateral PIN photodiode
title_short Optimization of process parameters for Si lateral PIN photodiode
title_full Optimization of process parameters for Si lateral PIN photodiode
title_fullStr Optimization of process parameters for Si lateral PIN photodiode
title_full_unstemmed Optimization of process parameters for Si lateral PIN photodiode
title_sort optimization of process parameters for si lateral pin photodiode
publishDate 2023
_version_ 1806424292047454208
score 13.222552

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