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The study of the effect of MOS transistor scaling on the critical device parameters

Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated desig...

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书目详细资料
主要作者:	Zazurina Abd Rahman
其他作者:	Ramzan Mat Ayub (Advisor)
格式:	Learning Object
语言:	English
出版:	Universiti Malaysia Perlis 2008
主题:	MOS transistor Integrated circuits Semiconductors Metal oxide semiconductors Metal oxide semiconductors > Mathematical models Transistors Metal oxide semiconductor field-effect transistors
在线阅读:	http://dspace.unimap.edu.my/xmlui/handle/123456789/2342
标签:	添加标签没有标签, 成为第一个标记此记录!

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