The study of the effect of MOS transistor scaling on the critical device parameters
Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated desig...
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| 格式: | Learning Object |
| 語言: | English |
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Universiti Malaysia Perlis
2008
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| 在線閱讀: | http://dspace.unimap.edu.my/xmlui/handle/123456789/2342 |
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