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The study of the effect of MOS transistor scaling on the critical device parameters

Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated desig...

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書目詳細資料
主要作者:	Zazurina Abd Rahman
其他作者:	Ramzan Mat Ayub (Advisor)
格式:	Learning Object
語言:	English
出版:	Universiti Malaysia Perlis 2008
主題:	MOS transistor Integrated circuits Semiconductors Metal oxide semiconductors Metal oxide semiconductors > Mathematical models Transistors Metal oxide semiconductor field-effect transistors
在線閱讀:	http://dspace.unimap.edu.my/xmlui/handle/123456789/2342
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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