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The study of the effect of MOS transistor scaling on the critical device parameters

Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated desig...

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書誌詳細
第一著者:	Zazurina Abd Rahman
その他の著者:	Ramzan Mat Ayub (Advisor)
フォーマット:	Learning Object
言語:	English
出版事項:	Universiti Malaysia Perlis 2008
主題:	MOS transistor Integrated circuits Semiconductors Metal oxide semiconductors Metal oxide semiconductors > Mathematical models Transistors Metal oxide semiconductor field-effect transistors
オンライン･アクセス:	http://dspace.unimap.edu.my/xmlui/handle/123456789/2342
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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